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IRF3708
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 87 W
Maximum Drain-Voltage Source |Vds|: 30 V
Maximum Gate-Voltage Source |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 62 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): nC 24
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO220AB