|
Количество
|
Стоимость
|
||
|
|
|||
|
|
|||
Type Designator: FQPF12N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 51 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 48 nC
Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm
Package: TO220F