|
Количество
|
Стоимость
|
||
|
|
|||
|
|
|||
Type Designator: AP4501GM
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 7(5.3) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 5(10) nS
Drain-Source Capacitance (Cd): 150(80) pF
Maximum Drain-Source On-State Resistance (Rds): 0.028(0.05) Ohm
Package: SO8