Транзистор IGBT FGH75T65UPD 150A 650V TO247

Type Designator: FGH75T65UPD

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 375

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 150

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65

Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 43

Collector Capacity (Cc), typ, pF: 205

Total Gate Charge (Qg), typ, nC: 385

Package: TO247