Транзистор H5N2007FN

H5N2007

Drain to Source voltage VDSS 200 V

Gate to Source voltage VGSS ±30 V

Drain current ID 25 A

Drain peak current ID (pulse)Note1 100 A

Body-Drain diode reverse Drain current IDR 25 A

Body-Drain diode reverse Drain peak current IDR (pulse)Note1 100 A

Avalanche current IAPNote3 9 A

Avalanche energy EARNote3 5.4 mJ

Channel dissipation Pch Note2 30 W

Channel to case thermal impedance θch-c 4.17 °C/W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C