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2SK3570
Type Designator: 2SK3570
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 29 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 48 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO263