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Type Designator: TGD30N40P
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 56.8
Maximum Collector-Emitter Voltage |Vce|, V: 400
Collector-Emitter saturation Voltage |Vcesat|, V: 1.4
Maximum Gate-Emitter Voltage |Veg|, V: 30
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 105
Maximum Collector Capacity (Cc), pF: 50
Package: TO252