Транзистор SUD40N06-25L

SUD40N06-25L

SUD40N06

40N06-25L

Type Designator: SUD40N06-25L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: TO252