Микросхема IGCM10F60GA

IGCM10F60GA

Features

Fully isolated Dual In-Line molded module

Reverse conducting IGBTs with monolithic body diode

Rugged SOI gate driver technology with stability against transient and negative voltage

Allowable negative VS potential up to -11V for signal transmission at VBS=15V

Integrated bootstrap functionality

Over current shutdown

Under-voltage lockout at all channels

Low side common emitter

Cross-conduction prevention

All of 6 switches turn off during protection

Lead-free terminal plating; RoHS compliant