Транзистор MRF9060N

MRF9060NRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power ó 60 Watts PEP Power Gain ó 18.0 dB Efficiency ó 40% (Two Tones) IMD ó -31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Integrated ESD Protection • 200C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,