Транзистор AUPS4067D1 TO- 600V 160A

AUPS4067D1 TO-

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Thermal Resistance Parameter Typ. Max. Units RJC (IGBT)

Thermal Resistance Junction-to-Case (each IGBT)  ––– 0.20 R

JC (Diode) Thermal Resistance Junction-to-Case (each Diode)  ––– 0.44 R

CS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 ––– R

JA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 °C/W Features

 Low VCE (on) Trench IGBT Technology

 Low Switching Losses  6µs SCSOA

 Square RBSOA

 100% of the parts tested for ILM 

 Positive VCE (on) Temperature Coefficient

 Soft Recovery Co-pak Diode

 Lead-Free, RoHS Compliant

 Automotive Qualified * Benefits

 High Efficiency in a Wide Range of Applications

 Suitable for Applications in the Low to Mid-Range Frequencies

 Rugged Transient Performance for Increased Reliability

 Excellent Current Sharing in Parallel Operation