Транзистор HFS10N60S

Type Designator: HFS10N60S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Voltage Source |Vds|: 600 V

Maximum Gate-Voltage Source |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): nC 29

Rise Time (tr): 69 nS

Drain-Source Capacitance (Cd): 145 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO-220F