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FDD6035AL
Type Designator: FDD6035AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Voltage Source |Vds|: 30 V
Maximum Gate-Voltage Source |Vgs|: 20 V
Maximum Drain Current |Id|: 46 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 325 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO252