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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Thermal Resistance Parameter Typ. Max. Units RJC (IGBT)
Thermal Resistance Junction-to-Case (each IGBT) ––– 0.20 R
JC (Diode) Thermal Resistance Junction-to-Case (each Diode) ––– 0.44 R
CS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 ––– R
JA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 °C/W Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses 6µs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient
Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant
Automotive Qualified * Benefits
High Efficiency in a Wide Range of Applications
Suitable for Applications in to the Low-Mid-Range Frequencies
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation