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Part Number : RJP30K3DPP-M0
Function : 40A, 360V, Silicon N Channel IGBT, Transistor
Package : TO-220FL Type
Maker : Renesas Electronics
Pinouts :
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.1V typ
3. High speed switching tr = 90 ns typ, tf = 250 ns typ
4. Low leak current ICES= 1 uA max
5. Isolated package TO-220FL